Single Dopant Diffusion in Semiconductor Technology

نویسندگان

  • Wilhelm Merz
  • Annegret Glitzky
  • W. Merz
  • A. Glitzky
چکیده

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Implementation of EIS for dopant profile analysis in n-type silicon

An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and a...

متن کامل

Non-Gaussian Diffusion Model for Phosphorus in Silicon Heavy-Doped Junctions

Besides common implant techniques, dopant diffusion enables steep diffusion profiles in heavily doped deep-source drain and ultra-shallow junctions as required in advanced microelectronic technology. Experimental phosphorus dopant diffusion profiles in silicon are described by a rational function diffusion (RFD) model, based on direct solution of Fick’s equations and suitable for actual work in...

متن کامل

Diffusion in Semiconductor Technology

The paper deals with the analysis of pair di usion models in semiconductor technology. The underlying model contains reaction-drift-di usion equations for the mobile point defects and dopant-defect pairs as well as reaction equations for immobile dopants which are coupled with a nonlinear Poisson equation for the chemical potential of the electrons. For homogeneous structures we present an exis...

متن کامل

General expression for effective diffusivity of foreign atoms migrating via a fast intermediate

In many solids, diffusion of foreign atoms takes place primarily through highly mobile intermediate species that periodically exchange with atoms in the crystalline lattice. The governing reaction-diffusion equations include a diffusion coefficient as well as kinetic parameters describing the exchange of the intermediate species. Yet it is often convenient to model a diffusive process in terms ...

متن کامل

Using Group Theoretic Method to Solve Multi-Dimensional Diffusion Equation

The nonlinear diffusion equation arises in many important areas of science and technology such as modelling of dopant diffusion in semiconductors. We give analytical solution to N -dimensional radially symmetric nonlinear diffusion equation. The transformation group theoretic approach is applied to analysis of this equation. The one-parameter group transformation reduces the number of independe...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2000